US Patent Issued to Yangtze Memory Technologies on Feb. 10 for "Memory device to program multiple bit lines using a single word line programming pulse" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,625, issued on Feb. 10, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device to program multiple bit lines using a single word line programming pulse" was invented by Chenhui Li (Wuhan, China), Xiangnan Zhao (Wuhan, China) and Hongtao Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of operating a memory, a memory, a memory system and an electronic device. In an example, a method of operating a memory is provided. The memory includes multiple word lines, and each of the plurality of word lines is coupled to a plurality of memory cells. The method includes: perfor...