US Patent Issued to Yangtze Memory Technologies on Dec. 23 for "Memory devices, operation methods thereof, and memory systems" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,869, issued on Dec. 23, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory devices, operation methods thereof, and memory systems" was invented by Guangyu Bai (Hubei, China), Li Xiang (Hubei, China), Ke Liang (Hubei, China) and Dejun Li (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a peripheral circuit and a memory array coupled with the peripheral circuit. The memory array includes at least one memory block. The peripheral circuit includes at least one row decoder. One memory block is correspondingly connected with one row decoder. The row decoder includes a logic circuit and a level...