US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Dec. 23 for "Discharge circuits for a NAND flash memory" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,887, issued on Dec. 23, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Discharge circuits for a NAND flash memory" was invented by Weiwei He (Wuhan, China), Liang Qiao (Wuhan, China) and Mingxian Lei (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of operating a memory device is disclosed. The memory device includes a memory string coupled with a bit line and a common source line. An erase voltage is applied to the bit line and the common source line in an erase operation. The bit line and the common source line are discharged in a discharge operation after the erase operation. A voltage difference betwee...