ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,406, issued on Dec. 23, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).
"3D memory device" was invented by Lan Yao (Hubei, China), Lei Xue (Hubei, China), Ziqun Hua (Hubei, China), Siping Hu (Hubei, China), Meng Yan (Hubei, China), Pengan Yin (Hubei, China) and Yucheng Zhang (Hubei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a three-dimensional (3D) memory, which includes a peripheral wafer and an array wafer. The peripheral wafer includes a first peripheral structure and a second peripheral structure. The array wafer includes a substrate, a structure to be tested and multiple interconn...