US Patent Issued to Yangtze Memory Technologies on Dec. 2 for "Vertical memory devices and method of fabrication thereof" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,059, issued on Dec. 2, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Vertical memory devices and method of fabrication thereof" was invented by Jingtao Xie (Wuhan, China), Bingjie Yan (Wuhan, China), Wenxi Zhou (Wuhan, China), Di Wang (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a stack structure and a contact structure. The stack structure comprises interleaved gate layers and insulating layers. The contact structure comprises a conductive structure and one o...