US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Dec. 2 for "Three-dimensional memory devices and fabricating methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,440, issued on Dec. 2, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and fabricating methods thereof" was invented by Zhenyu Lu (Wuhan, China), Yu Ru Huang (Wuhan, China), Qian Tao (Wuhan, China), Yushi Hu (Wuhan, China), Jun Chen (Wuhan, China), Xiaowang Dai (Wuhan, China), Jifeng Zhu (Wuhan, China), Yongna Li (Wuhan, China) and Lidong Song (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an alternating layer stack including conductive/dielectric layer pairs stacked in a first direction, a first insulating layer on the alternating layer stack, a thickness o...