US Patent Issued to Yangtze Memory Technologies on Dec. 2 for "Method of fabricating a semiconductor device using laser annealing" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,432, issued on Dec. 2, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Method of fabricating a semiconductor device using laser annealing" was invented by Dongyu Fan (Wuhan, China), Yuancheng Yang (Wuhan, China), Kun Zhang (Wuhan, China), Lei Liu (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the disclosure provide a semiconductor device and a method to manufacture the semiconductor device. A channel hole is formed in a stack including alternating first layers and second layers. The stack is formed over a substrate of the semiconductor device....