ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,434, issued on Dec. 2, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).
"Memory device" was invented by Qiguang Wang (Wuhan, China) and Jiefei Fu (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a stacked structure. The stacked structure includes a plurality of interlayer dielectric layers and a gate structure between adjacent interlayer dielectric layers. A charge trapping layer and a blocking layer are between the adjacent interlayer dielectric layers. The blocking layer envelops the charge trapping layer and separates the charge trapping layer from the gate structure. A tunneling layer is di...