US Patent Issued to Yangtze Memory Technologies on Dec. 2 for "Contact structure and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,034, issued on Dec. 2, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Contact structure and method of forming the same" was invented by Yihuan Wang (Wuhan, China) and Lina Miao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first die including a first stack of layers in a first region on a backside of the first die and a second stack of layers in a second region on the backside of the first die. The first stack of layers has a smaller number of different layers than the second stack of layers. A contact structure is formed in the first region on the backside of the first die. The ...