US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 4 for "Memory device and program operation thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,700,457, issued on Aug. 4, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and program operation thereof" was invented by Kaiwei Li (Wuhan, China), Kaikai You (Wuhan, China), Junbao Wang (Wuhan, China), Jianquan Jia (Wuhan, China), Wenhao Xiong (Wuhan, China), Xiangnan Zhao (Wuhan, China) and Songmin Jiang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a memory device includes memory strings each including a first drain select gate (DSG) transistor, an insulating structure disposed between two adjacent sets of the memory strings and electrically separating the first DSG transistors of ...