US Patent Issued to Yangtze Memory Technologies on Aug. 25 for "Vertical memory devices" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,177, issued on Aug. 25, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Vertical memory devices" was invented by Yuhui Han (Wuhan, China), Zhiliang Xia (Wuhan, China) and Wenxi Zhou (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first stack of layers stacked on a substrate. The first stack of layers includes a source connection layer that is formed by replacing source sacrificial layers. The semiconductor device includes a channel structure that extends in the first stack of layers. The channel structure includes a channel layer that is in contact with the source connection layer ...