US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 25 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,739, issued on Aug. 25, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and methods for forming the same" was invented by Kun Zhang (Wuhan, China), Lei Liu (Wuhan, China), Tao Yang (Wuhan, China), Linchun Wu (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a stack structure includes interleaved dielectric layers and conductive layers, a channel structure extending in the stack structure, and ...