US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 25 for "Memory device, a memory system and an operation method" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,717,474, issued on Aug. 25, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, a memory system and an operation method" was invented by Zhipeng Dong (Wuhan, China), Ying Huang (Wuhan, China), Manxi Wang (Wuhan, China), Hongtao Liu (Wuhan, China), Ling Chu (Wuhan, China) and Ke Liang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array and a control logic coupled to the memory array. The memory array includes memory blocks. Each memory block includes memory cell strings, and each memory cell string includes a first memory cell, second memory cells, and a third memory cell. ...