US Patent Issued to Yangtze Memory Technologies on Aug. 25 for "Contact structure and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,133, issued on Aug. 25, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Contact structure and method of forming the same" was invented by Zhen Guo (Wuhan, China), Lei Xue (Wuhan, China), Wei Xu (Wuhan, China), Bin Yuan (Wuhan, China) and ZongLiang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a memory stack of gate layers and insulating layers, a landing structure and a contact structure. The gate layers and the insulating layers are stacked alternatingly, and form stair steps in a staircase region. The landing structu...