US Patent Issued to Yangtze Memory Technologies on Aug. 25 for "3D memory cell with dual-side contacts and method of fabrication" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,771, issued on Aug. 25, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"3D memory cell with dual-side contacts and method of fabrication" was invented by Li Jiang (Wuhan, China), Beibei Li (Wuhan, China), Bin Yuan (Wuhan, China), Zongke Xu (Wuhan, China), Wei Xu (Wuhan, China), Lei Xue (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An implementation of a memory device includes a stack structure having alternating first layers and dielectric layers. The stack structure has a first surface and a second surface opposite to the first surface. First contact structures include a conducti...