US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 11 for "Semiconductor structure, dicing method thereof, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,985, issued on Aug. 11, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor structure, dicing method thereof, and memory" was invented by Dongyu Fan (Wuhan, China), Tingting Gao (Wuhan, China), Wei Xie (Wuhan, China), Zhong Lv (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one aspect of the present disclosure, a semiconductor structure is provided. The semiconductor structure may include a first wafer. The first wafer may include a plurality of first peripheral circuit chips, a first dicing lane between the first peripheral circui...