US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on April 7 for "Three-dimensional memory devices and fabricating methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,468, issued on April 7, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD..

"Three-dimensional memory devices and fabricating methods thereof" was invented by Kun Zhang (Wuhan, China), Yuancheng Yang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China), Dongxue Zhao (Wuhan, China), Tao Yang (Wuhan, China), Lei Liu (Wuhan, China), Di Wang (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional (3D) memory devices and fabricating methods are disclosed. A disclosed 3D memory device can comprises, a first semiconductor structure comprising an array of first type memory cells, a ...