US Patent Issued to Yangtze Memory Technologies on April 7 for "Detection of leakage current in flash memory" (Chinese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,477, issued on April 7, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Detection of leakage current in flash memory" was invented by Guanyu Sha (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Example memory devices, memory systems, methods, and media for detection of leakage current in a memory device are disclosed. One example method includes performing a program operation of the memory device. A voltage over a combination of one or more resistors is compared with a preset threshold during the program operation, where the one or more resistors are positioned between a pump source and a global word line in the mem...