US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on April 21 for "Memory device and operation method thereof, and memory system" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,171, issued on April 21, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and operation method thereof, and memory system" was invented by Zhipeng Dong (Wuhan, China), Li Xiang (Wuhan, China), Zhuo Chen (Wuhan, China), Shuai Wang (Wuhan, China) and Chunyuan Hou (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Implementations of the present disclosure provide a memory device, an operation method thereof, and a memory system. The memory device may include a memory cell array including a plurality of blocks. The memory device may include a peripheral circuit coupled to the memory cell array. The periphera...