US Patent Issued to Yangtze Memory Technologies on April 14 for "Method of improving programming operations in 3D NAND systems" (Chinese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,602,165, issued on April 14, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Method of improving programming operations in 3D NAND systems" was invented by Zhe Luo (Wuhan, China), Da Li (Wuhan, China), Feng Xu (Wuhan, China), Yaoyao Tian (Wuhan, China), Jianquan Jia (Wuhan, China) and Xiangnan Zhao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for performing a programming operation on a memory cell connected to a bit line and controlled by a word line. The method includes applying a first programming voltage signal to the word line to program the memory cell into a first stat...