US Patent Issued to Yale University on Aug. 11 for "Control and localization of porosity in III-nitrides and methods of using and making thereof" (Connecticut Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,907, issued on Aug. 11, was assigned to Yale University (New Haven, Conn.).

"Control and localization of porosity in III-nitrides and methods of using and making thereof" was invented by Jung Han (New Haven, Conn.) and Rami Elafandy (Hamden, Conn.).

According to the abstract* released by the U.S. Patent & Trademark Office: "III-Nitride layers having spatially controlled regions or domains of porosities therein with tunable optical, electrical, and thermal properties are described herein. Also disclosed are methods for preparing and using such III-nitride layers."

The patent was filed on Nov. 23, 2020, under Application No. 17/794,511.

*For further information, including images,...