US Patent Issued to Xidian University on June 23 for "CMOS structure, and fabrication methods of FinFET CMOS, FD CMOS and GAA CMOS" (Chinese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,716, issued on June 23, was assigned to Xidian University (Xi'an, China).

"CMOS structure, and fabrication methods of FinFET CMOS, FD CMOS and GAA CMOS" was invented by Huiyong Hu (Xi'an, China), Liming Wang (Xi'an, China), Bin Shu (Xi'an, China), Bin Wang (Xi'an, China), Ningning Zhang (Xi'an, China), Tian Miao (Xi'an, China), Jian Zhang (Xi'an, China), Lingyao Meng (Xi'an, China), Maolong Yang (Xi'an, China), Xinlong Shi (Xi'an, China) and Heming Zhang (Xi'an, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a CMOS structure, and fabrication methods of a FinFET CMOS, an FD CMOS and a GAA CMOS. The CMOS structure includes an nMOS a...