ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,666, issued on May 13, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD. (Xiamen, China).
"Semiconductor light emitting device" was invented by Yung-Ling Lan (Wuhu, China), Chan-Chan Ling (Wuhu, China), Chi-Ming Tsai (Wuhu, China) and Chia-Hung Chang (Wuhu, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semicondu...