US Patent Issued to Xiamen San'an Optoelectronics on July 7 for "Ultraviolet light emitting diode and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,506, issued on July 7, was assigned to Xiamen San'an Optoelectronics Co. Ltd. (Xiamen, China).

"Ultraviolet light emitting diode and manufacturing method therefor" was invented by Gong Chen (Xiamen, China), Yashu Zang (Xiamen, China), Jianbin Chen (Xiamen, China), Bin Jiang (Xiamen, China), Chung-Ying Chang (Xiamen, China) and Shao-Hua Huang (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are an ultraviolet light emitting diode (LED) and a manufacturing method thereof. The manufacturing method includes: providing an LED wafer including a substrate and a semiconductor stacked layer, the semiconductor stacked layer has a lower su...