US Patent Issued to XIAMEN SAN'AN OPTOELECTRONICS on Feb. 24 for "Epitaxial structure and light-emitting diode including the same" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,865, issued on Feb. 24, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD. (Xiamen, China).

"Epitaxial structure and light-emitting diode including the same" was invented by Daqian Ye (Tianjin, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial structure includes an n-type layer, a p-type layer, an active layer, and a current spreading layer. The active and current spreading layers respectively have first and third concentration profiles of indium which respectively include first and third characteristic peaks. A heavily doped layer formed between the active and current spreading layers has a second concentration profile of silico...