US Patent Issued to XIAMEN SAN'AN INTEGRATED CIRCUIT on Feb. 10 for "High electron mobility transistor device and method of making the same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,411, issued on Feb. 10, was assigned to XIAMEN SAN'AN INTEGRATED CIRCUIT Co. LTD. (Xiamen, China).

"High electron mobility transistor device and method of making the same" was invented by Shenghou Liu (Fujian, China), Wenbi Cai (Fujian, China), Xiguo Sun (Fujian, China) and Hui Zhang (Fujian, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An HEMT device includes a substrate, a buffer layer, a channel layer, and a barrier layer sequentially disposed in such order; a source electrode and a drain electrode disposed oppositely on an active region, and a gate electrode including a comb structure disposed in a gate region between the source electrod...