US Patent Issued to Xiamen PVTECH on Aug. 4 for "Light-emitting diode light source having high luminous efficiency" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,702,074, issued on Aug. 4, was assigned to Xiamen PVTECH Co. Ltd. (Xiamen, China).

"Light-emitting diode light source having high luminous efficiency" was invented by Fuxing Lu (Xiamen, China) and Zhirong Lin (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode (LED) light source having high luminous efficiency includes a substrate, a positive electrode pad, a negative electrode pad, a first LED chip and a second LED chip. The positive electrode pad is disposed on the substrate. The negative electrode pad is disposed on the substrate, and there is a groove formed between the negative electrode pad and the positive electrod...