US Patent Issued to Xi'an UniIC Semiconductors on June 30 for "Non-volatile three-dimensional memory cell, storage method, and chip assembly" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,670,115, issued on June 30, was assigned to Xi'an UniIC Semiconductors Co. Ltd. (Xi'an, China).

"Non-volatile three-dimensional memory cell, storage method, and chip assembly" was invented by Fengguo Zuo (Xi'an, China), Jun Zhou (Xi'an, China) and Bin Hou (Xi'an, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile three-dimensional memory cell, a storage method, and a chip assembly are provided. The non-volatile three-dimensional memory cell includes: a volatile memory chip; an interface chip, connected to the volatile memory chip in a three-dimensional stacked manner through a three-dimensional heterogeneous integrated structure; a non-...