ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,300, issued on March 24, was assigned to X-FAB Global Services GmbH (Erfurt, Germany).
"Semiconductor light sensor" was invented by Daniel Gabler (Apolda, Germany), Alexander Zimmer (Uhlstadt-Kirchhasel, Germany) and Robin Weirauch (Waltershausen, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light sensitive semiconductor structure comprises: a substrate; a doped upper region of said substrate having a first type of doping; a first implant region located below and being in direct contact with said doped upper region, said first implant region having a second type of doping so that a pn-junction is located between said doped upper region ...