US Patent Issued to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Semiconductor device having deep trench capacitor and method for making same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,884, issued on Nov. 3, was assigned to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING Co. LTD. (Wuhan, China).

"Semiconductor device having deep trench capacitor and method for making same" was invented by Xiaochen Xue (Wuhan, China) and Beibei Sheng (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method for making it are disclosed. The semiconductor device includes a first substrate having a front side and a backside opposite thereto, wherein a device structure is formed at the front side of the first substrate, and a DTC is formed at the backside of the first substrate; a first insulating layer and a second insul...