US Patent Issued to Wolfspeed on Sept. 22 for "Gate trench power semiconductor devices having shaped deep support shields that reduce cell pitch and on-state resistance" (North Carolina Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,419, issued on Sept. 22, was assigned to Wolfspeed Inc. (Durham, N.C.).

"Gate trench power semiconductor devices having shaped deep support shields that reduce cell pitch and on-state resistance" was invented by Madankumar Sampath (Morrisville, N.C.), Woongsun Kim (Cary, N.C.), Naeem Islam (Morrisville, N.C.) and Sei-Hyung Ryu (Cary, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises a silicon carbide based semiconductor layer structure and a first gate trench extending into an upper portion of the semiconductor layer structure. The semiconductor layer structure comprises a drift region having a first conductivity ...