ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,375, issued on Nov. 3, was assigned to Wolfspeed Inc. (Durham, N.C.).
"Edge termination for power semiconductor devices and related fabrication methods" was invented by Woongsun Kim (Cary, N.C.), Daniel Jenner Lichtenwalner (Raleigh, N.C.), Sei-Hyung Ryu (Cary, N.C.) and Naeem Islam (Morrisville, N.C.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes semiconductor layer structure comprising a semiconductor drift region of a first conductivity type and an edge termination region comprising a plurality of guard rings of a second conductivity type. The guard rings extend into a surface of the semiconductor drift region...