ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,026, issued on June 9, was assigned to Wolfspeed Inc. (Durham, N.C.).
"Power semiconductor devices including multiple gate bond pads" was invented by Thomas E. Harrington III (Durham, N.C.), Daniel Jenner Lichtenwalner (Raleigh, N.C.) and Edward Robert Van Brunt (Cary, N.C.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Power semiconductor devices comprise a silicon carbide based semiconductor layer structure including an active region defined therein and a gate bond pad that is on the semiconductor layer structure and vertically overlaps the active region."
The patent was filed on April 4, 2022, under Application No. 17/712,649.
*For further infor...