ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,658, issued on June 23, was assigned to Wolfspeed Inc. (Durham, N.C.).

"Buried shield structures for power semiconductor devices and related fabrication methods" was invented by Madankumar Sampath (Morrisville, N.C.), Sei-Hyung Ryu (Cary, N.C.), Daniel Jenner Lichtenwalner (Raleigh, N.C.), Woongsun Kim (Cary, N.C.) and Naeem Islam (Morrisville, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer structure having a drift region of a first conductivity type and a well region of a second conductivity type above the drift region. A gate is provided on the semiconductor layer structure adjacent the we...