US Patent Issued to Wolfspeed on Jan. 20 for "Semiconductor device with selectively grown field oxide layer in edge termination region" (North Carolina Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,488, issued on Jan. 20, was assigned to Wolfspeed Inc. (Durham, N.C.).

"Semiconductor device with selectively grown field oxide layer in edge termination region" was invented by In-Hwan Ji (Cary, N.C.), Edward Robert Van Brunt (Raleigh, N.C.) and Woongsun Kim (Cary, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a drift region, an active region in the drift region, and an edge termination region in the drift region adjacent to the active region. The edge termination region includes one or more guard rings in the drift region. The drift region has a first conductivity type and the one or more guard rings have a se...