US Patent Issued to Wisconsin Alumni Research Foundation on Oct. 6 for "Metal organic chemical vapor deposition of semi-insulating extrinsically carbon-doped group III-nitride films" (Wisconsin Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,753,526, issued on Oct. 6, was assigned to Wisconsin Alumni Research Foundation (Madison, Wis.).

"Metal organic chemical vapor deposition of semi-insulating extrinsically carbon-doped group III-nitride films" was invented by Shubhra S. Pasayat (Middleton, Wis.), Chirag Gupta (Middleton, Wis.), Swarnav Mukhopadhyay (Madison, Wis.) and Cheng Liu (Madison, Wis.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for growing semi-insulating, carbon-doped (C-doped) group III-nitride on a substrate via metal-organic chemical vapor deposition (MOCVD) are provided. In the methods, the controlled timing of the introduction of carbon dopant precursors in the MO...