ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,270, issued on Nov. 11, was assigned to Winbond Electronics Corp. (Taichung, Taiwan).
"Dynamic random access memory and method of fabricating the same" was invented by Noriaki Ikeda (Kaohsiung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a DRAM including includes bit line stack patterns on a substrate, spacers on sidewalls of the bit line stack patterns, capacitor contacts electrically connected to active regions in the substrate, and capacitor landing pads covering the capacitor contacts, first portions of the spacers, and a portion of the bit line stack patterns. In each spacer, a second dielectric layer is located between a ...