ALEXANDRIA, Va., June 9 -- United States Patent no. 12,651,621, issued on June 9, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan).

"Memory device and power-on reading method thereof" was invented by Johnny Chan (Fremont, Calif.) and Chi-Shun Lin (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power-on reading method of a memory device includes: generating a power-on signal according to a voltage level of a power voltage of the memory device; respectively detecting a plurality of ready states of a plurality of circuits in the memory device sequentially to generate a plurality of ready signals; reading a plurality of fuse states sequentially to generate a plurality of fuse s...