ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,788, issued on June 9, was assigned to WINBOND ELECTRONICS CORP. (Taichung City, Taiwan).
"Dynamic random access memory and method for forming the same" was invented by Shou-Te Wang (Taichung City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a DRAM includes forming a bit line contact over the active area, forming a bit line over the bit line contact, and forming a hard mask layer over the bit line. The method includes forming a semiconductor material layer over the active area and forming a metal layer over the semiconductor material layer and the hard mask layer. The method includes removing the metal layer over the ha...