ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,487, issued on March 31, was assigned to WILL SEMICONDUCTOR (SHANGHAI) Co. LTD. (Shanghai).
"Trench gate type IGBT" was invented by Tetsuya Okada (Saitama, Japan) and Hiroki Arai (Saitama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A trench gate type IGBT includes a plurality of trenches, including a plurality of gate trenches having a gate region inside, and a plurality of emitter trenches having an emitter region connected to an emitter electrode. A mesa section adjacent to the trench has a second mesa region, which does not function as a channel; and a contact, which connects the emitter electrode; the second mesa region being sandwich...