US Patent Issued to WILL SEMICONDUCTOR (SHANGHAI) on March 31 for "Semiconductor device with anode trench" (Japanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,477, issued on March 31, was assigned to WILL SEMICONDUCTOR (SHANGHAI) Co. LTD. (Shanghai).

"Semiconductor device with anode trench" was invented by Tetsuya Okada (Saitama, Japan), Kikuo Okada (Saitama, Japan) and Hiroki Arai (Saitama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: an anode electrode, formed on a front surface of a semiconductor substrate; a cathode electrode, formed on a back surface; a P layer, formed on the anode electrode side; an N layer, formed on the cathode electrode side; an N+ layer, arranged between the P layer and the N layer and having a higher carrier concentration than the N lay...