US Patent Issued to Western Digital Technologies on Nov. 25 for "Nitrogen doped oxides for lower bandgap" (American, Japanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,588, issued on Nov. 25, was assigned to Western Digital Technologies Inc. (San Jose, Calif.).

"Nitrogen doped oxides for lower bandgap" was invented by Quang Le (San Jose, Calif.), Brian R. York (San Jose, Calif.), Andrew Chen (San Jose, Calif.), Jinming Liu (San Jose, Calif.), Alan Spool (San Jose, Calif.), Son T. Le (San Jose, Calif.), Xiaoyong Liu (San Jose, Calif.), Michael A Gribelyuk (San Jose, Calif.), Hisashi Takano (Fujisawa, Japan) and Xing-Cai Guo (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Nitrogen doping an insulating layer can lower the bandgap of a magnetic storage device. It is challenging to nitrogen dope magnes...