US Patent Issued to Vishay Semiconductor on Nov. 3 for "Method for producing a photodiode" (German Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,474, issued on Nov. 3, was assigned to Vishay Semiconductor GmbH (Heilbronn, Germany).

"Method for producing a photodiode" was invented by Manuel Schmidt (Waghausel, Germany), Simon Richter (Massenbachhausen, Germany) and Christian Specht (Neuenstadt am Kocher, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of producing a photodiode having a layer structure that comprises a front-side first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type into which the first semiconductor layer is embedded, and an adjoining rear-side third semiconductor layer of the second conductivity type...