ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,769, issued on April 7, was assigned to VIA TECHNOLOGIES INC. (New Taipei City, Taiwan).
"Electrostatic discharge protection device" was invented by Ke-Yuan Chen (New Taipei City, Taiwan) and Tzu-Chun Liu (New Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An electrostatic discharge protection device is provided. The electrostatic discharge protection device includes first and second N-type and P-type and third P-type doped regions in the first and second N-type well regions in a P-type semiconductor substrate. First and second P-type well regions are in the first N-type well region. Third N-type, fourth P-type and N-type and fif...