ALEXANDRIA, Va., May 19 -- United States Patent no. 12,630,568, issued on May 19, was assigned to Versum Materials US LLC (Tempe, Ariz.).

"Low halide lanthanum precursors for vapor deposition" was invented by Neil Osterwalder (Carlsbad, Calif.) and Sergei V. Ivanov (Schnecksville, Pa.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Lanthanide compounds for vapor deposition having less than equal to50.0 ppm, less than equal to30.0 ppm, or less than equal to10.0 ppm of all halide impurity combined is provided. The purification systems and methods are also provided."

The patent was filed on Aug. 4, 2023, under Application No. 18/365,543.

*For further information, including images, charts and tables, please vis...