ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,906, issued on Aug. 11, was assigned to Versum Materials US LLC (Tempe, Ariz.).
"Selective thermal atomic layer deposition" was invented by Ronald M. Pearlstein (San Marcos, Calif.), Xinjian Lei (Vista, Calif.), Robert Gordon Ridgeway (Chandler, Ariz.), Aiping Wu (Chandler, Ariz.), Yi-Chia Lee (Chupei, Taiwan), Sumit Agarwal (Arvada, Colo.), Rohit Narayanan Kavassery Ramesh (Golden, Colo.), Wanxing Xu (Golden, Colo.) and Ryan James Gasvoda (Golden, Colo.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A selective thermal atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, ...