US Patent Issued to VERISILICON MICROELECTRONICS (SHANGHAI), VERISILICON MICROELECTRONICS (CHENGDU) on Sept. 22 for "Method, apparatus, electronic device, and storage medium for self-adaptive LUT generation" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,743,757, issued on Sept. 22, was assigned to VERISILICON MICROELECTRONICS (SHANGHAI) Co. LTD. (Shanghai) and VERISILICON MICROELECTRONICS (CHENGDU) Co. LTD. (Sichuan, China).

"Method, apparatus, electronic device, and storage medium for self-adaptive LUT generation" was invented by Kunxin Luo (Shanghai) and Song Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method, apparatus, electronic device, and storage medium for self-adaptive LUT generation. The method includes: obtaining the target discrete function configured in a specific functional unit for task processing, processing the target discrete function...