US Patent Issued to Veevx on May 12 for "Systems and methods for reading multi-bit MRAM cells" (Arizona Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,626,743, issued on May 12, was assigned to Veevx Inc. (Mesa, Ariz.).

"Systems and methods for reading multi-bit MRAM cells" was invented by Doug Smith (Mesa, Ariz.) and Sushil Sakhare (Mesa, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multi-bit MRAM cell includes at least a first MTJ device storing a first logic bit and a second MTJ device storing a second logic bit. The multi-bit MRAM cell is readable through application of a reference current across the multi-bit MRAM cell and comparison of a resultant output voltage with a plurality of reference voltages."

The patent was filed on Aug. 22, 2023, under Application No. 18/453,922.

*For furth...