US Patent Issued to VATECH, VATECH EWOO Holdings on April 21 for "Field emission X-ray source device" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,262, issued on April 21, was assigned to VATECH Co. Ltd. (Gyeonggi-do, South Korea) and VATECH EWOO Holdings Co. Ltd. (Gyeonggi-do, South Korea).

"Field emission X-ray source device" was invented by Duckhwan Yoon (Gyeonggi-do, South Korea) and Sora Sim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Proposed is a field emission X-ray source device including an insulating housing, an anode electrode, a cathode electrode, a gate electrode, an electronic emitter, and a target. The insulating housing extends in a tube shape. The anode electrode covers a first side of the insulating housing. The cathode electrode is placed at a ...