US Patent Issued to Vanguard International Semiconductor on Oct. 27 for "High electron mobility transistor and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,700, issued on Oct. 27, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).

"High electron mobility transistor and fabrication method thereof" was invented by Yi-Wei Lien (Hsinchu City, Taiwan), Wei-Chih Cheng (Tainan City, Taiwan), Shyh-Chiang Shen (Taipei City, Taiwan) and Hsin-Chang Tsai (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor includes a semiconductor channel layer and a semiconductor barrier layer disposed on a substrate. A source electrode, a gate electrode and a drain electrode are disposed on the semiconductor channel layer. A patterned dielectric lay...